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 SKM 800GA126D
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANS 4 Trench IGBT Modules
SKM 800GA126D
Inverse diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Preliminary Data
Features
Typical Applications
Inverse diode
Remarks
Thermal characteristics
Mechanical data
GA
1
14-06-2005 SEN
(c) by SEMIKRON
SKM 800GA126D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
14-06-2005 SEN
(c) by SEMIKRON
SKM 800GA126D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of Inverse CAL Diode Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-06-2005 SEN
(c) by SEMIKRON
SKM 800GA126D
Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
14-06-2005 SEN
(c) by SEMIKRON


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